オグラ　アツシ   Ogura Atusi   小椋　厚志    所属   明治大学  理工学部    職種   専任教授
言語種別	英語
発行・発表の年月	2002/03
形態種別	学術雑誌
標題	Using tetrakis-diethylamido-hafnium for HfO2 thin-film growth in low-pressure chemical vapor deposition
掲載誌名	THIN SOLID FILMS
出版社・発行元	ELSEVIER SCIENCE SA
巻・号・頁	406(1-2),pp.215-218
著者・共著者	Y Ohshita, A Ogura, A Hoshino, S Hiiro, T Suzuki, H Machida
概要	We synthesized very pure tetrakis-diethylamido-hafnium {Hf[N(C2H5)(2)](4):Hf(NEt2)(4)} that can be used as a precursor for depositing Hf-related materials in chemical vapor deposition (CVD). Hf(NEt2)(4) is liquid at room temperature and has a moderate vapor pressure ( 1 torr at 80 degreesC). It is stable, and not pyrophoric in the air. HfO2 film was deposited by low-pressure CVD using the Hf(NEt2)(4)/O-2 gas system. The amount, of residual N and C in the deposited film were decreased when the substrate temperature was increased. Increasing the temperature also improved the step coverage quality of the film deposited on the substrate with a trench. When the film was deposited with Hf(NEt2)(4) and O-2 at 450 degreesC, the resulting stoichiometric HfO2 film. is polycrystalline with a low impurity concentration and has good step-coverage quality. (C) 2002 Elsevier Science B.V. All rights reserved.
DOI	10.1016/S0040-6090(01)01765-5
ISSN	0040-6090