ノグチ　ユタカ   NOGUCHI Yutaka   野口　裕    所属   明治大学  理工学部    職種   専任教授
言語種別	英語
発行・発表の年月	2016/10
形態種別	学術雑誌
査読	査読あり
標題	Observation of charge transport through CdSe/ZnS quantum dots in a single-electron transistor structure
執筆形態	共著(筆頭者以外)
掲載誌名	Journal of Applied Physics
掲載区分	国外
出版社・発行元	AIP publishing
巻・号・頁	120(16),pp.164306-1-164306-6
担当区分	最終著者,責任著者
著者・共著者	Masanori Kobo, Makoto Yamamoto, Hisao Ishii, Yutaka Noguchi
概要	We fabricated single-electron transistors (SETs) having CdSe/ZnS core-shell-type quantum dots (CdSe/ZnS-QDs) as a Coulomb island using a wet chemistry technique. The electron-transport characteristics through the CdSe/ZnS-QDs were examined in an SET structure at 13 K. Coulomb blockade behavior with typical gate voltage dependence was clearly observed. The estimated charge addition energies of a CdSe/ZnS-QD ranged from 70 to 280 meV. Moreover, additional structures, including negative differential conductance, appeared in the stability diagram in the source-drain bias region beyond 100 mV; these structures are specific to single-charge transport through the discrete energy levels in the Coulomb island.
DOI	10.1063/1.4966175