オグラ　アツシ   Ogura Atusi   小椋　厚志    所属   明治大学  理工学部    職種   専任教授
言語種別	英語
発行・発表の年月	1985
形態種別	学術雑誌
標題	Germanium film on SiO2 with a 〈100〉 texture deposited by the rf sputtering technique
掲載誌名	Applied Physics Letters
巻・号・頁	47(10),pp.1059-1061
著者・共著者	Koji Egami, Atsushi Ogura
概要	Germanium (Ge) films on SiO2 with 〈100〉 texture deposited by a sputtering technique and the texture enhancement by a subsequent solid-state thermal annealing are demonstrated for the first time. A 0.6-μm-thick Ge film on a surface oxidized Si wafer deposited by the rf sputtering technique at 600°C produces a 〈100〉 texture, and the preferential orientation of the film is enhanced by a conventional grain growth process at 900°C (approximately 0.95Tm, where Tm is the melting point in the Kelvin scale) for 1 h, while the crystallographic texture of the films has never changed at 650°C (0.75Tm) annealing. The texture enhancement is interpreted by the existence of 〈100〉 oriented precursors and a simple coalescence and rearrangement model.
DOI	10.1063/1.96378
ISSN	0003-6951
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