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Tsutsumi Toshiyuki
Department Undergraduate School , School of Science and Technology Position Professor |
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| Language | English |
| Publication Date | 2003/06 |
| Type | International Conference |
| Title | "Electrical Property of Ideal Rectangular Si-Fin Channel Double-Gate MOSFETs" |
| Contribution Type | Co-authored (other than first author) |
| Journal | Abstracts of 2003 Silicon Nanoelectronics Workshop,A Satellite Conference of the VLSI Symposium,The IEEE Electron Devices Society |
| Volume, Issue, Page | pp.pp64-65 |
| Author and coauthor | Y.X.Liu, K.Ishii, T.Tsutsumi, M.Masahara, T.Sekigawa, K.Sakamoto, H.Takashima, and E.Suzuki |