オグラ アツシ
Ogura Atusi
小椋 厚志 所属 明治大学 理工学部 職種 専任教授 |
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言語種別 | 英語 |
発行・発表の年月 | 1990/12 |
形態種別 | 学術雑誌 |
標題 | EXTREMELY THIN AND DEFECT-FREE SI-ON-INSULATOR FABRICATION BY TUNNEL EPITAXY |
掲載誌名 | APPLIED PHYSICS LETTERS |
出版社・発行元 | AMER INST PHYSICS |
巻・号・頁 | 57(26),pp.2806-2807 |
著者・共著者 | A OGURA, Y FUJIMOTO |
概要 | A novel technique for extremely thin and defect-free Si-on-insulator (SOI) fabrication, called tunnel epitaxy, is demonstrated. A lateral/vertical growth ration of 20 is achieved with precisely controlled SOI film thickness, where the minimum thickness for the fabricated SOI is 0.05-mu-m. No defect was observed in the fabricated SOI with (001) lateral growth direction. The growth front is a flat (001) plane. The lateral growth length is limited to 1-2-mu-m by tunnel clogging, due to poly-Si grain growth. The tunnel epitaxy, however, has a potential for larger area SOI fabrication, because the fabricated tunnel length is 10-mu-m. |
DOI | 10.1063/1.103770 |
ISSN | 0003-6951 |