オグラ アツシ
Ogura Atusi
小椋 厚志 所属 明治大学 理工学部 職種 専任教授 |
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言語種別 | 日本語 |
発行・発表の年月 | 1992 |
形態種別 | 国際会議議事録 |
査読 | 査読あり |
標題 | An investigation on the cutoff characteristics of sub-quarter-micron SOI MOSFET |
掲載誌名 | 1991 IEEE International SOI Conference Proceedings |
巻・号・頁 | 152-153頁 |
著者・共著者 | Risho Koh, Tohru Mogami, Atsushi Ogura |
概要 | The influence of DIBL on the latch condition for subquarter-micron SOI (silicon-on-insulator) MOSFETs is investigated. It is found that the main effect of DIBL is lowering the minimum hole current for latch. Simulated results on device structures proposed to improve cutoff characteristics are also shown. The cutoff characteristics of an SOI MOSFET (L = 0.2 μm) for which higher acceptor concentration (Na = 2 × 1017 cm-3) SOI film and LDD (lightly doped drain) structure are adopted are shown. These design options are effective for reducing DIBL at the SOI bottom. |