オグラ　アツシ   Ogura Atusi   小椋　厚志    所属   明治大学  理工学部    職種   専任教授
言語種別	英語
発行・発表の年月	1993/04
形態種別	学術雑誌
標題	50-NM-THICK SILICON-ON-INSULATOR FABRICATION BY ADVANCED EPITAXIAL LATERAL OVERGROWTH - TUNNEL EPITAXY
掲載誌名	JOURNAL OF THE ELECTROCHEMICAL SOCIETY
出版社・発行元	ELECTROCHEMICAL SOC INC
巻・号・頁	140(4),pp.1125-1130
著者・共著者	A OGURA, A FURUYA, R KOH
概要	An advanced epitaxial lateral overgrowth (ELO) technique, called tunnel epitaxy is presented, in which the lateral epitaxy is grown in a small gap between the upper and lower layers of SiO2. Therefore, the fabricated silicon on insulator (SOI) thickness can be controlled precisely by the gap height. Thin SOI films with thicknesses of 50-150 nm are fabricated successfully using this technique. The fabricated SOI areas were 5-10 mum in length and 10-750 mum in width. Due to gas heating through a narrow SiO2 tunnel, the optimal growth conditions for the tunnel epitaxy using ultrahigh vacuum chemical vapor deposition (UHV/CVD) depends on the tunnel length, distance between the gas injection window and the seed. A defect-free area within 2-3 mum from the seed was obtained. An n-channel metal oxide semiconductor field effect transistor (MOSFET) fabricated in this area shows good characteristics. Possible mechanisms for defect generation after 2-3 mum growth are discussed.
DOI	10.1149/1.2056210
ISSN	0013-4651