オグラ　アツシ   Ogura Atusi   小椋　厚志    所属   明治大学  理工学部    職種   専任教授
言語種別	日本語
発行・発表の年月	1995
形態種別	国際会議議事録
査読	査読あり
標題	Highly uniform SOI fabrication by applying voltage during KOH etching of bonded wafers
掲載誌名	IEEE International SOI Conference
巻・号・頁	58-59頁
著者・共著者	Atsushi Ogura
概要	A new technique is presented for thinning SOI bonded wafer by applying voltage during KOH etching. Excellent SOI thickness variation of less than ±μm is achieved by etching wafers in KOH and applying voltage between the supporting substrate and the electrode in the etchant. Higher uniformity can also be achieved by refining the etching equipment and controlling the chemical reaction at the surface during etching. This technique is useful in providing low-cost bonded SOI wafers by simplifying conventional thinning processes.