オグラ　アツシ   Ogura Atusi   小椋　厚志    所属   明治大学  理工学部    職種   専任教授
言語種別	日本語
発行・発表の年月	1996
形態種別	学術雑誌
査読	査読あり
標題	Control of thickness variation in Si-on-insulator bonded wafers by applying voltage during KOH etching
掲載誌名	Japanese Journal of Applied Physics, Part 2: Letters
巻・号・頁	35(1 B)
著者・共著者	Atsushi Ogura
概要	A new thinning technique is developed to control thickness variation in Si-on-insulator (SOI) bonded wafers. During KOH etching, voltage is applied between the supporting substrate and the etchant. Excellent SOI thickness variation of less than ±0.1 μm is achieved by etching 4±0.5 μm thick, 150 mmφ SOI bonded wafers. The resulting film thickness after etching is controlled from 0.8 to 2.6 μm by changing the applied voltage from 50 to 75 V.
ISSN	0021-4922
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