オグラ　アツシ   Ogura Atusi   小椋　厚志    所属   明治大学  理工学部    職種   専任教授
言語種別	英語
発行・発表の年月	1996/01
形態種別	学術雑誌
標題	Control of thickness variation in Si-on-insulator bonded wafers by applying voltage during KOH etching
掲載誌名	JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
出版社・発行元	JAPAN J APPLIED PHYSICS
巻・号・頁	35(1B),pp.L71-L73
著者・共著者	A Ogura
概要	A new thinning technique is developed to control thickness variation in Si-on-insulator (SOI) bonded wafers. During KOH etching, voltage is applied between the supporting substrate and the etchant. Excellent SOI thickness variation of less than +/-0.1 mu m is achieved by etching 4+/-0.5 mu m thick, 150 mm phi SOI bonded wafers. The resulting film thickness after etching is controlled from 0.8 to 2.6 mu m by changing the applied voltage from 50 to 75 V.
DOI	10.1143/jjap.35.L71
ISSN	0021-4922