オグラ アツシ
Ogura Atusi
小椋 厚志 所属 明治大学 理工学部 職種 専任教授 |
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言語種別 | 英語 |
発行・発表の年月 | 2008 |
標題 | Study of Stress Effect on Replacement Gate Technology with Compressive Stress Liner and eSiGe for pFETs |
掲載誌名 | SISPAD: 2008 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES |
出版社・発行元 | IEEE |
巻・号・頁 | pp.109-+ |
著者・共著者 | S. Yamakawa, S. Mayuzumi, J. Wang, Y. Tateshita, H. Wakabayashi, T. Ohno, H. Ansai, D. Kosemura, M. Takei, A. Ogura |
概要 | The stress effect at the channel region of pFETs with compressive stress liner (c-SL) and eSiGe using replacement gate technology is firstly investigated in detail based on the combination of UV-Raman spectroscopy and 3D stress simulation. The gate length effect for the channel stress is confirmed by measurement and simulation. Moreover, the Ion dependence on the channel width is also investigated. It is found that the lateral stress along the channel is enhanced at the edge beside STI, resulting in high Ion at narrow gate width region. |
DOI | 10.1109/SISPAD.2008.4648249 |
PermalinkURL | https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=67650391326&origin=inward |