オグラ　アツシ   Ogura Atusi   小椋　厚志    所属   明治大学  理工学部    職種   専任教授
言語種別	英語
発行・発表の年月	1996/01
形態種別	学術雑誌
標題	Characterization of surface imperfections of silicon-on-insulator wafers by means of extremely asymmetric x-ray reflection topography
掲載誌名	APPLIED PHYSICS LETTERS
出版社・発行元	AMER INST PHYSICS
巻・号・頁	68(5),pp.693-695
著者・共著者	S Kimura, A Ogura, T Ishikawa
概要	Surface imperfections of silicon-on-insulator (SOI) wafers are investigated by means of extremely asymmetric x-ray reflection topography, in which the glancing angle of the incident x rays is near the critical angle of total reflection; this geometry is achieved by using tunable wavelength synchrotron radiation. Two kinds of SOI wafers: bonded and two oxygen implanted silicon wafers are used as samples. The experimental topographs reveal a characteristic contrast for each sample, which cannot be observed by conventional x-ray topography The observed contrasts strongly depend on the fabrication techniques of the SOI wafers. (C) 1996 American Institute of Physics.
DOI	10.1063/1.116594
ISSN	0003-6951