オグラ　アツシ   Ogura Atusi   小椋　厚志    所属   明治大学  理工学部    職種   専任教授
言語種別	英語
発行・発表の年月	1996/09
形態種別	学術雑誌
標題	Evaluation of depth profile of defects in ultrathin Si film on buried SiO2 formed by implanted oxygen
掲載誌名	APPLIED PHYSICS LETTERS
出版社・発行元	AMER INST PHYSICS
巻・号・頁	69(10),pp.1367-1369
著者・共著者	A Ogura, T Tatsumi, T Hamajima, H Kikuchi
概要	A simple technique is presented for evaluating defect profiles in ultrathin Si films on buried SiO2 formed by implanted oxygen. A combination of thinning by sacrificial oxidation and epitaxial him growth by UHV-CVD is used. By measuring the defect density of the epitaxial film with respect to the thickness prior to epitaxial growth, the profile of the initial defect density can easily be evaluated. This technique is applied to evaluate the Si on insulator structure fabricated by state-of-the-art technique, in which low dose oxygen implantation (similar to 4x10(17) cm(-2)) and high temperature internal oxidation processes are used. The defect density at the surface of the film is 250 cm(-2). However, as the buried interface is approached, the defect density increases. The defect density at 20 nm from the buried interface is as high as 6x10(5) cm(-2). A defect generation mechanism is also discussed. (C) 1996 American Institute of Physics.
DOI	10.1063/1.117438
ISSN	0003-6951