オグラ アツシ
Ogura Atusi
小椋 厚志 所属 明治大学 理工学部 職種 専任教授 |
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言語種別 | 英語 |
発行・発表の年月 | 1997/03 |
形態種別 | 学術雑誌 |
標題 | Thinning of SOI bonded wafers by applying voltage during KOH etching: Improvement of thickness variation by reducing leakage current |
掲載誌名 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS |
出版社・発行元 | JAPAN J APPLIED PHYSICS |
巻・号・頁 | 36(3B),pp.1519-1521 |
著者・共著者 | A Ogura |
概要 | A thinning technique for controlling thickness variation in Si-on-insulator (SOI) bonded wafers is presented. During KOH etching, voltage is applied between the supporting substrate and the etchant. The SOI thickness variation after the etch stop depends on the leakage current during etching. Reducing the current to the order of nanoamperes results in a thickness range of 50 nm. An average thickness of the superficial Si ranging from 0.3 to 2 mu m is obtained by etching 3 +/- 0.5-mu m-thick SOI bonded wafers, and depends on the applied voltage. Atomic force microscopy observation reveals a surface roughness of 1.4 nm (root-mean-square). |
ISSN | 0021-4922 |
PermalinkURL | https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=3743142818&origin=inward |