オグラ　アツシ   Ogura Atusi   小椋　厚志    所属   明治大学  理工学部    職種   専任教授
言語種別	英語
発行・発表の年月	1998/03
形態種別	学術雑誌
標題	Precise measurement of strain induced by local oxidation in thin silicon layers of silicon-on-insulator structures
掲載誌名	JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
出版社・発行元	JAPAN J APPLIED PHYSICS
巻・号・頁	37(3B),pp.1282-1284
著者・共著者	S Kimura, A Ogura
概要	We used X-ray diffraction to quantitatively measure the strain induced by the local oxidation of silicon in thin-film silicon-on-insulator (SOI) wafers. In the samples of bonded SOI wafers thinned by plasma-assisted chemical etching, the reflection peaks of the top Si layer and the base Si substrate could be measured independently because the orientation of these lattice planes differs slightly. Moreover, the strain near the surface region could be measured because the top Si layer is only 200-nm thick. We show that the strain in the SOI wafers is more than one order of magnitude larger than that in the bulk wafers when the device region is fully isolated by the surrounding SiO2.
ISSN	0021-4922
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