オグラ　アツシ   Ogura Atusi   小椋　厚志    所属   明治大学  理工学部    職種   専任教授
言語種別	英語
発行・発表の年月	1998/03
形態種別	学術雑誌
標題	Evaluation of electron trap levels in SOI buried oxides by transient photocurrent spectroscopy
掲載誌名	JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
出版社・発行元	JAPAN J APPLIED PHYSICS
巻・号・頁	37(3B),pp.1274-1277
著者・共著者	Y Miura, K Hamada, T Kitano, A Ogura
概要	An electron trap density of 2 x 10(15) cm(-3) in a buried oxide of silicon-on-insulator structure is detected by transient photocurrent spectroscopy. Through the two-step photodepopulation method, the distribution of electron trap level was found to have a peak at 2.3 eV below the oxide conduction band edge. The capture cross section of 8.8 x 10(-14) cm(2) meant that the electron traps are positively charged centers. Flatband shift measurement indicates that pre-existing positive charges in the oxide are compensated for by photoelectron injection. These results suggest that the pre-existing positive charges and the electron traps have an identical origin.
DOI	10.1143/JJAP.37.1274
ISSN	0021-4922