オグラ　アツシ   Ogura Atusi   小椋　厚志    所属   明治大学  理工学部    職種   専任教授
言語種別	英語
発行・発表の年月	1998/05
形態種別	学術雑誌
標題	Extension of dose window for low-dose separation by implanted oxygen
掲載誌名	JOURNAL OF THE ELECTROCHEMICAL SOCIETY
出版社・発行元	ELECTROCHEMICAL SOC INC
巻・号・頁	145(5),pp.1735-1737
著者・共著者	A Ogura
概要	In low-dose separation by implanted oxygen (SIMOX) the concentration of implanted oxygen is less than the SiO2 stoichiometry even at its peak depth. The fabrication process, therefore, consists of oxygen precipitation, growth, and coal lescence of the precipitates during a high-temperature anneal. It has been believed that there is a process window of 4 +/- 0.5 x 10(17)/cm(2) for the oxygen dose to form a continuous buried oxide in low-dose SIMOX. However, it may be possible to extend the dose window by applying the proper annealing sequence for each dose. In this study, we succeeded in extending the dose window to 2-6 x 10(17)/cm(2) by modifying the temperature ramp rate depending on the dose for the high-temperature anneal, based on thermodynamical considerations.
DOI	10.1149/1.1838549
ISSN	0013-4651