オグラ　アツシ   Ogura Atusi   小椋　厚志    所属   明治大学  理工学部    職種   専任教授
言語種別	英語
発行・発表の年月	1998/06
形態種別	学術雑誌
標題	Infrared studies of silicon oxide formation in silicon wafers implanted with oxygen
掲載誌名	APPLIED PHYSICS LETTERS
出版社・発行元	AMER INST PHYSICS
巻・号・頁	72(22),pp.2853-2855
著者・共著者	H Ono, T Ikarashi, A Ogura
概要	The formation process of buried oxide in low-dose oxygen-implanted wafers was investigated using Fourier-transform infrared absorption spectroscopy. In the wafers as-implanted with oxygen, the peak position of the Si-O-Si asymmetric stretching mode was observed to be lower in wave numbers for the lower dose samples, in which the oxygen atoms are buried as substoichiometric silicon oxide with small stress. Therefore, we conclude that the frequency shift is not caused by compressive stress but by the substoichiometry of the buried oxide. After annealing at over 600 degrees C, the buried oxide starts to form stoichiometric silicon dioxide, and completes it at over 1200 degrees C. However, we also found that some amount of oxygen atoms diffuse out of the wafer at a temperature over 1000 degrees C. (C) 1998 American Institute of Physics.
DOI	10.1063/1.121479
ISSN	0003-6951