オグラ　アツシ   Ogura Atusi   小椋　厚志    所属   明治大学  理工学部    職種   専任教授
言語種別	英語
発行・発表の年月	1998/10
形態種別	学術雑誌
標題	Defect analysis in bonded and H+ split silicon-on-insulator wafers by photoluminescence spectroscopy and transmission electron microscopy
掲載誌名	JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
出版社・発行元	JAPAN J APPLIED PHYSICS
巻・号・頁	37(10B),pp.L1199-L1201
著者・共著者	M Tajima, A Ogura, T Karasawa, A Mizoguchi
概要	Defects in silicon-on-insulator wafers fabricated by bonding and H+ splitting technique (Unibond wafers [Unibond is a registered trademark of SOITEC.]) were characterized by photoluminescence (PI,) spectroscopy together with transmission electron microscopy (TEM). PL from the superficial Si layer and that from the supporting substrate were separately analyzed using UV and visible light as an excitation source, respectively. The deep-level PL band appeared around 0.8 eV both in the superficial layer and the substrate with a spectral shape similar to that often observed in oxygen precipitated Si crystals. Correspondingly, TEM observation revealed precipitates and related defects. These results allow us to conclude that the defects in Unibond wafers originate in oxygen precipitation during the two-step annealing in the wafer fabrication process.
ISSN	0021-4922
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