オグラ　アツシ   Ogura Atusi   小椋　厚志    所属   明治大学  理工学部    職種   専任教授
言語種別	英語
発行・発表の年月	1999/04
形態種別	学術雑誌
標題	Formation of a buried oxide film at the damage peak induced by oxygen implantation into a Si substrate
掲載誌名	APPLIED PHYSICS LETTERS
出版社・発行元	AMER INST PHYSICS
巻・号・頁	74(15),pp.2188-2190
著者・共著者	A Ogura
概要	The formation of a buried oxide layer in a Si substrate by oxygen implantation and subsequent high-temperature annealing is examined. The oxide precipitation, growth, and coalescence processes are enhanced by increasing the oxygen concentration in the annealing atmosphere. These processes are enhanced more effectively at the damage peak, where the implantation damage is at a maximum, than at the concentration peak. Therefore, the buried oxide layer can be formed at the damage peak instead of at the concentration peak by choosing an appropriate ramping rate for the annealing and Ar/O-2 ratio in the annealing atmosphere. Double buried oxide layers, with a layer at both the damage peak and the concentration peak, can also be fabricated by using a single sequence of oxygen implantation and high-temperature annealing. In both cases, oxygen atoms introduced from the atmosphere through the surface, as well as the implanted oxygen, contribute to the formation of the buried oxide layers. (C) 1999 American Institute of Physics. [S0003-6951(99)03315-X].
DOI	10.1063/1.123796
ISSN	0003-6951