オグラ　アツシ   Ogura Atusi   小椋　厚志    所属   明治大学  理工学部    職種   専任教授
言語種別	英語
発行・発表の年月	2000/02
形態種別	学術雑誌
標題	Annealing properties of defects during Si-on-insulator fabrication by low-dose oxygen implantation studied by monoenergetic positron beams
掲載誌名	JOURNAL OF APPLIED PHYSICS
出版社・発行元	AMER INST PHYSICS
巻・号・頁	87(4),pp.1659-1665
著者・共著者	A Uedono, S Tanigawa, A Ogura, H Ono, R Suzuki, T Ohdaira, T Mikado
概要	The depth distributions and species of defects in Si on insulator (SOI) fabricated by low-dose oxygen implantation were determined from measurements of Doppler broadening spectra of the annihilation radiation and lifetime spectra of positrons. The temperature range for the annealing of the defects in the subsurface region (< 100 nm) was divided into three stages. Annealing behaviors of the defects in stages I (600-800 degrees C) and II (800-1100 degrees C) were identified as the introduction of vacancy clusters and their recovery process, respectively. The major species of the defects in stage III (1100-1300 degrees C) was identified as oxygen-related defects, and the mean size of the open volume of such defects was close to that of a hexavacancy. The oxygen-related defects in the SOI layer were found to be present even after annealing at 1350 degrees C. The effect of the presence of vacancy-type defects on the depth distribution of oxygen atoms is also discussed. (C) 2000 American Institute of Physics. [S0021-8979(00)03104-2].
DOI	10.1063/1.372074
ISSN	0021-8979