オグラ　アツシ   Ogura Atusi   小椋　厚志    所属   明治大学  理工学部    職種   専任教授
言語種別	英語
発行・発表の年月	2000/06
形態種別	学術雑誌
標題	In- and out-diffusion of oxygen during the buried-oxide formation in oxygen-implanted silicon
掲載誌名	JOURNAL OF APPLIED PHYSICS
出版社・発行元	AMER INST PHYSICS
巻・号・頁	87(11),pp.7782-7787
著者・共著者	H Ono, A Ogura
概要	Formation mechanism of buried oxide in silicon wafers during the annealing process after oxygen implantation has been investigated by using Fourier-transform infrared absorption spectroscopy and secondary ion mass spectrometry. The implanted Si wafers were annealed at a different temperature, for a different time, and in a different atmosphere. We found that the implanted oxygen density decreased by the out-diffusion after a very short time at an elevated temperature. We also found that the in-diffusion of oxygen took place after a long time at the same temperature. The in- and out-diffusion behaviors clearly depended on the annealing atmosphere. This can be explained by taking account that the equilibrium surface concentration of oxygen differs between the annealing atmospheres. (C) 2000 American Institute of Physics. [S0021-8979(00)03211-4].
DOI	10.1063/1.373454
ISSN	0021-8979