オグラ アツシ
Ogura Atusi
小椋 厚志 所属 明治大学 理工学部 職種 専任教授 |
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言語種別 | 英語 |
発行・発表の年月 | 2000/06 |
形態種別 | 学術雑誌 |
標題 | Evaluation of buried oxide formation in low-dose SIMOX process |
掲載誌名 | APPLIED SURFACE SCIENCE |
出版社・発行元 | ELSEVIER SCIENCE BV |
巻・号・頁 | 159,pp.104-110 |
著者・共著者 | A Ogura, H Ono |
概要 | Formation of a buried oxide (BOX) layer during high-temperature annealing in a separation by implanted oxygen (SIMOX) process was evaluated by means of Fourier-transform infrared (FTIR) absorption spectroscopy. The evaluation results suggested that the formation process could be controlled by changing the ramping rate and the oxygen concentration in the atmosphere during high-temperature annealing. This was confirmed through TEM observation after annealing under various conditions. Reduction of the O+ implantation dose was enabled by adopting a slow ramping rate for the annealing. Novel Si-on-insulator (SOI) structures with a BOX layer at the damage-peak (Dp) depth and a double BOX layer at both Dp and Rp (projection range) depths were obtained, depending on the O+ implantation dose, by applying a combination of a slow ramping rate and a high oxygen concentration in the atmosphere. The atmospheric oxygen enhanced the growth of the oxide precipitate and smoothed the SiO2/Si interfaces of the SOI structures. (C) 2000 Elsevier Science B.V. All rights reserved. |
DOI | 10.1016/S0169-4332(00)00056-8 |
ISSN | 0169-4332 |