オグラ　アツシ   Ogura Atusi   小椋　厚志    所属   明治大学  理工学部    職種   専任教授
言語種別	英語
発行・発表の年月	2000/12
形態種別	学術雑誌
標題	Low-pressure chemical vapor deposition of TaCN films by pyrolysis of ethylamido-tantalum
掲載誌名	JOURNAL OF CRYSTAL GROWTH
出版社・発行元	ELSEVIER SCIENCE BV
巻・号・頁	220(4),pp.604-609
著者・共著者	Y Ohshita, A Ogura, A Hoshino, S Hiiro, H Machida
概要	Thin films of Tantalum nitride (TaN) were deposited from tetra-ethylamido-tantalum (Ta (NEt2)(4)) by low-pressure chemical vapor deposition. Good-quality step coverage is achieved below 400 degreesC, because the deposition rate is determined by the reaction rates on the surface. The film resistivity increases, however, as the substrate temperature decreases. In order to obtain the low resistivity of films deposited at lower temperatures, we have increased the amount of injected H-2 gas during the deposition. The resistivity decreases by the increase in the H-2 gas flow rate, and it is shown that a large amount of H-2 gas injection during the deposition is an effective method for obtaining both low resistivity and high-quality step coverage. The residual carbon concentration in the film is measured to be > 10%, on the other hand, the concentration of N less than 1%. The microstructural investigation using transmission electron microscopy (TEM) reveals that crystalline structure of the deposited film has an amorphous phase. (C) 2000 Elsevier Science B.V. All rights reserved.
DOI	10.1016/S0022-0248(00)00816-2
ISSN	0022-0248