オグラ　アツシ   Ogura Atusi   小椋　厚志    所属   明治大学  理工学部    職種   専任教授
言語種別	英語
発行・発表の年月	2001/04
形態種別	学術雑誌
標題	Evaluation of SOI substrates by positron annihilation
掲載誌名	JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
出版社・発行元	INST PURE APPLIED PHYSICS
巻・号・頁	40(4B),pp.2903-2906
著者・共著者	A Uedono, A Ogura, S Tanigawa
概要	The annihilation characteristics of positrons in Si-on-insulator (SOI) wafers were studied using a monoenergetic positron beam. From measurements of Doppler broadening spectra of the annihilation radiation as a function of incident positron energy, the line-shape parameter S of the buried oxide (BOX) layers fabricated by the separation-by-implanted-oxygen process was found to be smaller than that of a SiO2, film fabricated by conventional thermal oxidation. This was attributed to the suppression of the positronium formation in the BOX layer due to the trapping of positrons by defects; the charge state of the defects was estimated to be negative. Positrons implanted into the superficial Si layer annihilated from the trapped state by the defects. These defects were considered to be related to oxygen atoms, and the concentration of such oxygen-related defects was high at the region close to the SOI/BOX interface.
ISSN	0021-4922
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