オグラ　アツシ   Ogura Atusi   小椋　厚志    所属   明治大学  理工学部    職種   専任教授
言語種別	英語
発行・発表の年月	2001/06
形態種別	学術雑誌
標題	Photoluminescence analysis of {311} interstitial defects in wafers synthesized by separation by implanted oxygen
掲載誌名	JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
出版社・発行元	INST PURE APPLIED PHYSICS
巻・号・頁	40(6A),pp.L567-L569
著者・共著者	J Takiguchi, M Tajima, A Ogura, S Ibuka, Y Tokumaru
概要	The interstitial-type {311} planar defects introduced in wafers synthesized by separation by implanted oxygen (SIMOX) have been investigated by photoluminescence (PL) spectroscopy and transmission electron microscopy (TEM) Deep-level PL of low-dose SIMOX wafers with closes of 2, 4, and 6 x 10(17) cm(-2) were analyzed under various excitations with different penetration depths, In as-implanted wafers, the 0.903 eV line associated with the {311} defects appeared in the region below the oxygen implanted layer. Correspondingly, TEM observation revealed rod-like defects due to the {311} defects in the same region. After annealing, the 0.903 eV line disappeared and dislocation-related lines became visible. These results indicate that the {311} defects are generated below the implanted layer and are extended to dislocations after annealing.
DOI	10.1143/jjap.40.L567
ISSN	0021-4922