オグラ　アツシ   Ogura Atusi   小椋　厚志    所属   明治大学  理工学部    職種   専任教授
言語種別	英語
発行・発表の年月	2001/10
形態種別	学術雑誌
標題	Formation of buried oxide layer in Si substrates by oxygen precipitation at implantation damage of light ions
掲載誌名	JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
出版社・発行元	INST PURE APPLIED PHYSICS
巻・号・頁	40(10B),pp.L1075-L1077
著者・共著者	A Ogura
概要	We have developed a novel Si-on-insulator fabrication technique in which light ions, such as H+ and He+, are implanted into a Si substrate instead of O+ implantation in the SIMOX (separation by implanted oxygen) process. The atmospheric oxygen atoms precipitate at the implantation damage during high temperature annealing in an oxydizing atmosphere. A continuous buried oxide layer was successfully formed in a Si substrate under the appropriate conditions, particularly a slow ramping rate and a high oxygen concentration in the atmosphere for the anneal.
ISSN	0021-4922
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