オグラ　アツシ   Ogura Atusi   小椋　厚志    所属   明治大学  理工学部    職種   専任教授
言語種別	英語
発行・発表の年月	2001/11
形態種別	学術雑誌
標題	HfO2 growth by low-pressure chemical vapor deposition using the Hf(N(C2H5)(2))(4)/O-2 gas system
掲載誌名	JOURNAL OF CRYSTAL GROWTH
出版社・発行元	ELSEVIER SCIENCE BV
巻・号・頁	233(1-2),pp.292-297
著者・共著者	Y Ohshita, A Ogura, A Hoshino, S Hiiro, H Machida
概要	WO, thin film was deposited on a Si substrate by low pressure chemical vapor deposition using the Hf(N(C2H5)(2))(4) (tetrakis- diethylamido-hafnium)/O-2 gas system. Hf(N(C2H5)(2))(4) is liquid at room temperature and has a moderate vapor pressure for the chemical vapour deposition process. The precursor was translated to the deposition chamber by a bubbling system, and the WO, films were deposited as functions of the deposition temperature and O-2 gas flow rate. Typical deposition temperature was 300-450 degreesC. Although the source gas has N in the molecule, the amount of residual N was small. The residual C amount was reduced by increasing the injected O-2 gas flow rate. On the other hand, the amount of the residual N was almost constant independent of O-2 gas flow rate, and was decreased by increasing the deposition temperature. (C) 2001 Elsevier Science B.V. All rights reserved.
DOI	10.1016/S0022-0248(01)01502-0
ISSN	0022-0248