オグラ　アツシ   Ogura Atusi   小椋　厚志    所属   明治大学  理工学部    職種   専任教授
言語種別	英語
発行・発表の年月	2001/12
形態種別	学術雑誌
標題	Oxygen-related defects in low-dose separation-by-implanted oxygen wafers probed by monoenergetic positron beams
掲載誌名	JOURNAL OF APPLIED PHYSICS
出版社・発行元	AMER INST PHYSICS
巻・号・頁	90(12),pp.6026-6031
著者・共著者	A Uedono, ZQ Chen, A Ogura, H Ono, R Suzuki, T Ohdaira, T Mikado
概要	The depth distributions of oxygen-related defects in separation-by-implanted oxygen wafers were determined from measurements of Doppler broadening spectra of the annihilation radiation. Vacany-oxygen complexes were introduced by implanting 180-keV oxygen at (2-6)x10(17) cm(-2) into Si substrates. Their sizes decreased below the subsurface region (<100 nm) because an agglomeration of vacancy-type defects was suppressed by the interaction between vacancies and oxygen atoms. As the dosage was increased, in the region near the projected range of oxygen, atomic rearrangement of vacancy-type defects occurred, and this rearrangement is considered to introduce SiOx (x<less than>2) that is stable at high annealing temperatures. Oxygen-related defects were presented in the superficial Si layer even after annealing at 1350 degreesC. The concentration of such defects was low when the substrate was implanted with a dose of 4x10(17) cm(-2). (C) 2001 American Institute of Physics.
DOI	10.1063/1.1415064
ISSN	0021-8979