オグラ アツシ
Ogura Atusi
小椋 厚志 所属 明治大学 理工学部 職種 専任教授 |
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言語種別 | 英語 |
発行・発表の年月 | 2002 |
形態種別 | 国際会議議事録 |
査読 | 査読あり |
標題 | Oxygen-related defects in silicon-on-insulator wafers probed monoenergetic positron beams |
掲載誌名 | 2002 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS |
出版社・発行元 | IEEE |
巻・号・頁 | pp.196-197 |
著者・共著者 | A Uedono, H Yamamoto, A Nakano, A Ogura, T Ohdaira, R Suzuki, T Mikado |
概要 | Si-on-insulator (SOI) wafers fabricated by SIMOX and bond-and-ethed-back technique were characterized by monoenergetic positron beams. Oxygen-related defects were found to be present in SOI layers, and the mean open volume of such defects in SIMOX wafers was estimated to be larger than that of a hexavacancy. The interaction between the defects in the SOI layers and hydorogen was also studied. |