オグラ　アツシ   Ogura Atusi   小椋　厚志    所属   明治大学  理工学部    職種   専任教授
言語種別	英語
発行・発表の年月	2002/02
形態種別	学術雑誌
標題	Effects of deposition conditions on step-coverage quality in low-pressure chemical vapor deposition of HfO2
掲載誌名	JOURNAL OF CRYSTAL GROWTH
出版社・発行元	ELSEVIER SCIENCE BV
巻・号・頁	235(1-4),pp.365-370
著者・共著者	Y Ohshita, A Ogura, A Hoshino, T Suzuki, S Hiiro, H Machida
概要	Hafnium dioxide thin film is deposited on a Si substrate with trenches by LPCVD using the Hf(NEt2)(4)/O-2 gas system. When the deposition temperature is 300degreesC, poor-quality step-coverage is obtained. The step-coverage quality improves as the deposition temperature increases, and the good-quality step coverage is achieved at 450degreesC. By analyzing the profile of the film thickness in the trench, it is suggested that there are at least two types of important reactants that contribute to the film deposition. One is an active reactant. The contribution of this adsorbate to the film deposition decreases as the substrate temperature increases. On the other hand, the other reactant is a slightly active reactant. When a film is deposited at 450degreesC, most of the film is deposited from this slightly active adsorbate and good-quality step coverage is obtained. (C) 2002 Elsevier Science B.V. All rights reserved.
DOI	10.1016/S0022-0248(01)01833-4
ISSN	0022-0248