オグラ アツシ
Ogura Atusi
小椋 厚志 所属 明治大学 理工学部 職種 専任教授 |
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言語種別 | 英語 |
発行・発表の年月 | 2002/03 |
形態種別 | 学術雑誌 |
標題 | Using tetrakis-diethylamido-hafnium for HfO2 thin-film growth in low-pressure chemical vapor deposition |
掲載誌名 | THIN SOLID FILMS |
出版社・発行元 | ELSEVIER SCIENCE SA |
巻・号・頁 | 406(1-2),pp.215-218 |
著者・共著者 | Y Ohshita, A Ogura, A Hoshino, S Hiiro, T Suzuki, H Machida |
概要 | We synthesized very pure tetrakis-diethylamido-hafnium {Hf[N(C2H5)(2)](4):Hf(NEt2)(4)} that can be used as a precursor for depositing Hf-related materials in chemical vapor deposition (CVD). Hf(NEt2)(4) is liquid at room temperature and has a moderate vapor pressure ( 1 torr at 80 degreesC). It is stable, and not pyrophoric in the air. HfO2 film was deposited by low-pressure CVD using the Hf(NEt2)(4)/O-2 gas system. The amount, of residual N and C in the deposited film were decreased when the substrate temperature was increased. Increasing the temperature also improved the step coverage quality of the film deposited on the substrate with a trench. When the film was deposited with Hf(NEt2)(4) and O-2 at 450 degreesC, the resulting stoichiometric HfO2 film. is polycrystalline with a low impurity concentration and has good step-coverage quality. (C) 2002 Elsevier Science B.V. All rights reserved. |
DOI | 10.1016/S0040-6090(01)01765-5 |
ISSN | 0040-6090 |