オグラ　アツシ   Ogura Atusi   小椋　厚志    所属   明治大学  理工学部    職種   専任教授
言語種別	英語
発行・発表の年月	2002/03
形態種別	学術雑誌
標題	Formation of epitaxially ordered SiO2 in oxygen-implanted silicon during thermal annealing
掲載誌名	JOURNAL OF CRYSTAL GROWTH
出版社・発行元	ELSEVIER SCIENCE BV
巻・号・頁	236(1-3),pp.37-40
著者・共著者	T Shimura, T Hosoi, K Fukuda, M Umeno, A Ogura
概要	The growth of epitaxially ordered SiO2 in oxygen-implanted silicon during thermal annealing was investigated. The implanted Si wafers were annealed for various durations at 1350degreesC. Diffraction streaks at 0.50.5L (L similar to 1) of Si were observed from these samples. The intensity of the streak gradually increased with annealing time, while the peak position and the width of the streak did not change. Referring to these results, the growth of the buried oxide layers is discussed in terms of the ordered structure. (C) 2002 Elsevier Science B.V. All rights reserved.
DOI	10.1016/S0022-0248(01)02136-4
ISSN	0022-0248