オグラ　アツシ   Ogura Atusi   小椋　厚志    所属   明治大学  理工学部    職種   専任教授
言語種別	英語
発行・発表の年月	2002/05
形態種別	学術雑誌
標題	Defects in silicon-on-insulator wafers and their hydrogen interaction studied by monoenergetic positron beams
掲載誌名	JOURNAL OF APPLIED PHYSICS
出版社・発行元	AMER INST PHYSICS
巻・号・頁	91(10),pp.6488-6492
著者・共著者	A Uedono, ZQ Chen, A Ogura, R Suzuki, T Ohdaira, T Mikado
概要	Vacancy-type defects in separation-by-implanted oxygen wafers were probed using monoenergetic positron beams. We measured the Doppler broadening spectra of annihilation radiation and the lifetime spectra of positrons. The species of the defects in Si-on-insulator (SOI) layers were identified as oxygen clusters or small oxygen precipitates, and the positrons are considered to be trapped by open spaces adjacent to such defects. The mean size of the open spaces was estimated to be larger than that of a hexavacancy. After annealing in a hydrogen atmosphere at 600 degreesC, both the lifetime of positrons trapped by the defects and the annihilation probability of positrons with high-momentum electrons decreased. These facts were attributed to the trapping of hydrogen atoms by the open spaces. The defects in bond-and-etchback SOI wafers and their interaction with hydrogen were also studied. (C) 2002 American Institute of Physics.
DOI	10.1063/1.1470253
ISSN	0021-8979