オグラ　アツシ   Ogura Atusi   小椋　厚志    所属   明治大学  理工学部    職種   専任教授
言語種別	英語
発行・発表の年月	2002/06
形態種別	学術雑誌
標題	Oxygen-related defects and their annealing behavior in low-dose Separation-by-IMplanted OXygen (SIMOX) wafers studied by slow positron beams
掲載誌名	APPLIED SURFACE SCIENCE
出版社・発行元	ELSEVIER SCIENCE BV
巻・号・頁	194(1-4),pp.112-115
著者・共著者	ZQ Chen, A Uedono, A Ogura, H Ono, R Suzuki, T Ohdaira, T Mikado
概要	Oxygen-related defects in Separation-by-IMplanted OXygen (SIMOX) wafers and their annealing behavior are studied by variable-energy positron annihilation spectroscopy. After implantation of 180 keV oxygen into Si substrates at a dose of 4 x 10(17) cm(-2), two kinds of vacancy-type defects are observed by positrons, i.e. vacancy clusters and vacancy-oxygen complexes. Their sizes are larger than and close to V-6, respectively. According to the annealing behavior of the vacancy cluster, there are three annealing stages. A detailed discussion of the annealing behavior of the two defects is presented. (C) 2002 Elsevier Science B.V. All rights reserved.
DOI	10.1016/S0169-4332(02)00098-3
ISSN	0169-4332
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