オグラ　アツシ   Ogura Atusi   小椋　厚志    所属   明治大学  理工学部    職種   専任教授
言語種別	英語
発行・発表の年月	2003/06
形態種別	学術雑誌
標題	Tris-diethylamino-silane decomposition due to tetrakis-diethylamido-hafnium in Hf1-xSixO2 chemical vapor deposition
掲載誌名	JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
出版社・発行元	INST PURE APPLIED PHYSICS
巻・号・頁	42(6A),pp.L578-L580
著者・共著者	Y Ohshita, A Ogura, M Ishikawa, T Kada, H Machida
概要	Tris-diethylamino-silane SiH(NEt2)(3) is stable and does not decompose by itself below 550degreesC. However, it easily decomposes even at 150degreesC with the addition of tetrakis-diethylamido-hafnium (Hf(NEt2)(4)). This enhancement of silicon source decomposition, determined the properties of Hf1-xSixO2 film, when the Hf1-xSixO2 film is deposited by CVD using the Hf(NEt2)(4)/SiH(NEt2)(3)/O-2 gas system. Then 550degreesC, the Si concentration is almost constant and the ratio of N to Si is almost one independent of the deposition temperature. However, above 550degreesC, the Si concentration increases and the ratio of N to Si decreases, since SiH(NEt2)(3) is thermally decomposed by itself.
DOI	10.1143/JJAP.42.L5781
ISSN	0021-4922
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