オグラ　アツシ   Ogura Atusi   小椋　厚志    所属   明治大学  理工学部    職種   専任教授
言語種別	英語
発行・発表の年月	2003/06
形態種別	学術雑誌
標題	Formation of patterned buried insulating layer in Si substrates by He+ implantation and annealing in oxidation atmosphere
掲載誌名	APPLIED PHYSICS LETTERS
出版社・発行元	AMER INST PHYSICS
巻・号・頁	82(25),pp.4480-4482
著者・共著者	A Ogura
概要	We fabricated patterned buried insulating layers in a Si substrate by implanting He+ ions through a patterned mask and annealing in an oxidation atmosphere. Compared with patterned O+ implantation and annealing, this technique causes less damage, and can therefore reduce defect density at the edge of the patterned buried insulator. The buried insulator could be SiO2 or a void with thin SiO2 film on the inner surface. The formation of a void could further reduce defect density, probably because the stress induced by SiO2 formation is small. The fabricated surface was extremely smooth within the focal depth limitations of state-of-the-art photolithography techniques. (C) 2003 American Institute of Physics.
DOI	10.1063/1.1586783
ISSN	0003-6951