オグラ　アツシ   Ogura Atusi   小椋　厚志    所属   明治大学  理工学部    職種   専任教授
言語種別	英語
発行・発表の年月	2004
形態種別	国際会議議事録
査読	査読あり
標題	Ni thin film deposition using tetrakis(trifluorophosphine)nickel(0), Ni(PF3)(4)
掲載誌名	ADVANCED METALLIZATION CONFERENCE 2004 (AMC 2004)
出版社・発行元	MATERIALS RESEARCH SOCIETY
巻・号・頁	pp.603-608
著者・共著者	M Ishikawa, T Kada, H Machida, A Ogura, Y Ohshita
概要	Ni(PF3)(4), which is a candidate Ni CVD precursor, was synthesized from Cp2Ni and PF3 by our developed process. Ni(PF3)(4) is a liquid at room temperature and has a vapor pressure high enough (215 Torr at 30 degrees C) for the Ni CVD process. Ni thin films with a [111] preferential orientation were obtained even below 300 degrees C using the Ni(PF3)(4)/He gas system, and there was no difference between the deposition rates on Si and SiO2 surfaces.