オグラ　アツシ   Ogura Atusi   小椋　厚志    所属   明治大学  理工学部    職種   専任教授
言語種別	英語
発行・発表の年月	2004
形態種別	国際会議議事録
査読	査読あり
標題	CVD precursors for NiSi films
掲載誌名	ADVANCED METALLIZATION CONFERENCE 2003 (AMC 2003)
出版社・発行元	MATERIALS RESEARCH SOC
巻・号・頁	pp.663-668
著者・共著者	T Kada, M Ishikawa, H Machida, A Ogura, Y Ohshita
概要	Nickel monosilicide (NiSi) is an attractive material for the metal-gate electrodes or contacts of MOSFETs. On chemical vapor deposition (CVD), conformal or selective depositions are expected. However, a suitable Ni precursor for NiSi film has not been studied yet. We therefore investigated the vapor pressure, thermal decomposition, and the deposition of Ni precursors with low melting points, bis(methylcyclopentadienyl)Ni (McCp(2)Ni) and allyl(cyclopentadienyl)Ni (AllylCpNi). The vapor pressures of McCP(2)Ni and AllylCpNi were high enough for CVD, respectively 1 and 10 Torr at 73degreesC. Their thermal decompositions were also adaquate for CVD precursors. Ni was deposited at 300degreesC by use of a McCP(2)Ni/H-2 gas mixture. Then Ni reacted with the Si substrate, and NiSi was formed. Adding Si3H8 to the mixture prevented the Si substrate from forming NiSi2 into the Si substrate. Residual C decreased with deposition temperature. Films could be deposited below the thermal decomposition temperature of MeCp2Ni. Interactions with H-2, or the substrate surfaces were indicated. It was also observed that films were deposited on a Si substrate faster than on SiO2 and vice versa. The surface affected the deposition rate. It was important to Study the deposition conditions, especially the interactions, if pure NiSi films with flat surfaces are to be deposited.
ISSN	0886-7860