オグラ アツシ
Ogura Atusi
小椋 厚志 所属 明治大学 理工学部 職種 専任教授 |
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言語種別 | 英語 |
発行・発表の年月 | 2010 |
標題 | ELECTRICAL PROPERTIES AND BOUNDARY STRUCTURES IN CAST-GROWN POLYCRYSTALLINE SILICON |
掲載誌名 | 35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE |
出版社・発行元 | IEEE |
巻・号・頁 | 35th Vol.2,pp.1419-1422 |
著者・共著者 | Takuto Kojima, Yoshio Ohshita, Tomihisa Tachibana, Atsushi Ogura, Masafumi Yamaguchi |
概要 | Annealing effects on grain boundaries (GBs) in polycrystalline Si (pc-Si) was studied using electron-beam-induced current (EBIC) measurement. Recombination velocities were determined for different boundary structures. Investigated boundary structures were electrically active Sigma 3, Sigma 9, Sigma 27a, and small angle (SA) boundaries. Recombination velocity at SA boundary is greater by an order than those of CSL boundaries. Compared between CSL boundaries in the as-grown wafer, the recombination velocities are greater in higher sigma numbers of GBs. The electrically active Sigma 3 boundary was revealed to consist of two or more twin boundaries with dislocations. Recombination velocities at GBs except Sigma 27a decreased after annealing at 600 to 800 degrees C. It is suggested that metal impurities diffused out from GBs at these temperatures. After annealing at 1000 degrees C, recombination velocities of all the GBs drastically increased. Precipitation and increase in Secco-etch pit size were observed after annealing. |
DOI | 10.1109/PVSC.2010.5614412 |
ISSN | 0160-8371 |
PermalinkURL | http://jglobal.jst.go.jp/detail.php?from=API&JGLOBAL_ID=201202230327108177 |