オグラ　アツシ   Ogura Atusi   小椋　厚志    所属   明治大学  理工学部    職種   専任教授
言語種別	日本語
発行・発表の年月	2013/12/25
標題	Structure Analyses of Room Temperature Deposited AlO
掲載誌名	Jpn J Appl Phys
出版社・発行元	The Japan Society of Applied Physics
巻・号・頁	52(12),122303-122303-5頁
著者・共著者	Sakai Chikako, Yamamoto Shunsuke, Urushibata Ko, Miki Shohei, Arafune Koji, Yoshida Haruhiko, Lee Hyun Ju, Ogura Atsushi, Ohshita Yoshio, Satoh Shin-ichi
概要	We studied the structure of ozone-based atomic layer deposited aluminium oxide (AlO<inf>x</inf>) films as a passivation layer for p-type crystalline silicon (c-Si) solar cells and focused on the differences in the structure by the production conditions of AlO<inf>x</inf>films. Carbon (C)-related groups such as methyl, hydroxyl, and carboxyl groups which originate from the aluminium source, trimethylaluminium, were only found in the AlO<inf>x</inf>film deposited at room temperature (RT-sample). By post-deposition thermal annealing (PDA), the C-related groups were desorbed from the film and a part of their space remained as voids. The C-related groups were not found in the films deposited at 200 or 300 °C (heated-samples) since they were desorbed during the deposition. Even though C-related groups did not exist in the both RT- and heated-samples after PDA, the structure of the AlO<inf>x</inf>film of the RT-sample was different from that of the heated-sample.
ISSN	0021-4922
NAID	150000107838
PermalinkURL	http://ci.nii.ac.jp/naid/150000107838