オグラ アツシ
Ogura Atusi
小椋 厚志 所属 明治大学 理工学部 職種 専任教授 |
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言語種別 | 日本語 |
発行・発表の年月 | 2013/12/25 |
標題 | Structure Analyses of Room Temperature Deposited AlO |
掲載誌名 | Jpn J Appl Phys |
出版社・発行元 | The Japan Society of Applied Physics |
巻・号・頁 | 52(12),122303-122303-5頁 |
著者・共著者 | Sakai Chikako, Yamamoto Shunsuke, Urushibata Ko, Miki Shohei, Arafune Koji, Yoshida Haruhiko, Lee Hyun Ju, Ogura Atsushi, Ohshita Yoshio, Satoh Shin-ichi |
概要 | We studied the structure of ozone-based atomic layer deposited aluminium oxide (AlO<inf>x</inf>) films as a passivation layer for p-type crystalline silicon (c-Si) solar cells and focused on the differences in the structure by the production conditions of AlO<inf>x</inf>films. Carbon (C)-related groups such as methyl, hydroxyl, and carboxyl groups which originate from the aluminium source, trimethylaluminium, were only found in the AlO<inf>x</inf>film deposited at room temperature (RT-sample). By post-deposition thermal annealing (PDA), the C-related groups were desorbed from the film and a part of their space remained as voids. The C-related groups were not found in the films deposited at 200 or 300 °C (heated-samples) since they were desorbed during the deposition. Even though C-related groups did not exist in the both RT- and heated-samples after PDA, the structure of the AlO<inf>x</inf>film of the RT-sample was different from that of the heated-sample. |
ISSN | 0021-4922 |
NAID | 150000107838 |
PermalinkURL | http://ci.nii.ac.jp/naid/150000107838 |