オグラ　アツシ   Ogura Atusi   小椋　厚志    所属   明治大学  理工学部    職種   専任教授
言語種別	英語
発行・発表の年月	2003
標題	NiSi MOCVD for fabricating FinFETs and UTB-SOI devices
掲載誌名	2003 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS
出版社・発行元	IEEE
巻・号・頁	pp.70-71
著者・共著者	A Ogura, H Wakabayashi, M Ishikawa, T Kada, H Machida, Y Ohshita
概要	We investigated the use of NiSi MOCVD for fabricating FinFETs and UTB-SOI devices. MeCp2Ni was synthesized as a Ni precursor. The NiSi film deposited using MeCp2Ni and Si3H6 had a smooth interface with the Si substrate without Ni penetration. The step coverage of the deposited film on a patterned substrate was excellent.
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