オグラ　アツシ   Ogura Atusi   小椋　厚志    所属   明治大学  理工学部    職種   専任教授
言語種別	英語
発行・発表の年月	2015
標題	Raman Spectroscopy Study of Crystalline Damage Induced by PECVD SiN
掲載誌名	2015 IEEE 42ND PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC)
出版社・発行元	IEEE
著者・共著者	Y. Yamashita, N. Ikeno, N. Aizawa, T. Tachibana, Y. Ohshita, A. Ogura
概要	We investigated the crystalline damage induced by SiN passivation film deposited by conventional plasma enhanced chemical vapor deposition using Raman spectroscopy. From Raman peak shift and width, we evaluated the crystalline damage in the Si surface under the SiN film depending on the RF power and gas flow rate. We found the compressive stresses were induced in the Si surface and the stresses were larger with higher RF power and smaller SiH4 gas flow rate. The crystalline damage probed by the Raman spectroscopy could be decreased by reducing the RF power for the deposition.
DOI	10.1109/PVSC.2015.7356320
ISSN	0160-8371
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