オグラ アツシ
Ogura Atusi
小椋 厚志 所属 明治大学 理工学部 職種 専任教授 |
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言語種別 | 日本語 |
発行・発表の年月 | 2005/12/01 |
標題 | Nickel thin film deposition using Ni (PF <inf>3</inf>) <inf>4</inf> for LSI electrode |
掲載誌名 | Proceedings - Electrochemical Society |
巻・号・頁 | PV 2005-05,612-619頁 |
著者・共著者 | Masato Ishikawa, Hideaki Machida, Atsushi Ogura, Yoshio Ohshita |
概要 | We propose tetrakis(trifuluorophosphine)nickel (0) [Ni(PF 3) 4] as a nickel precursor for CVD and develop a new method to synthesized Ni(PF 3) 4 from Cp 2Ni and PF 3 with high yield over 70%. Ni(PF 3) 4 have high vapor pressure and can be provided in CVD process using mass flow controller without carrier gas. Using the Ni(PF 3) 4 as a Ni precursor in LPCVD system, we obtained Ni thin film with high deposition rate (7nm/min at 200°C at 30 Pa). The activation energy for the deposition was estimate at approximately 0.6 eV. Conformal Ni thin films were deposited and had a (111) preferential orientation. |
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