オグラ アツシ
Ogura Atusi
小椋 厚志 所属 明治大学 理工学部 職種 専任教授 |
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言語種別 | 英語 |
発行・発表の年月 | 2019 |
標題 | 3300V Scaled IGBTs Driven by 5V Gate Voltage |
掲載誌名 | 2019 31ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) |
出版社・発行元 | IEEE |
巻・号・頁 | pp.43-46 |
著者・共著者 | Saraya, Takuya, Itou, Kazuo, Takakura, Toshihiko, Fukui, Munetoshi, Suzuki, Shinichi, Takeuchi, Kiyoshi, Tsukuda, Masanori, Numasawa, Yohichiroh, Satoh, Katsumi, Matsudai, Tomoko, Saito, Wataru, Kakushima, Kuniyuki, Hoshii, Takuya, Furukawa, Kazuyoshi, Watanabe, Masahiro, Shigyo, Naoyuki, Wakabayashi, Hitoshi, Tsutsui, Kazuo, Iwai, Hiroshi, Ogura, Atsushi, Nishizawa, Shin-ichi, Omura, Ichiro, Ohashi, Hiromichi, Hiramoto, Toshiro |
概要 | In this work, 5V gate drive 3300V IGBTs, designed based on a scaling principle, have been demonstrated. Turn-off characteristics without noticeable degradation in the gate voltage waveforms were confirmed. Turn-off tail current of the scaled devices significantly decreased than conventional 15V-driven devices. As a result of both Vce and turn-off loss reduction, 35% improvement in Eoff vs Vcesat relationship was achieved. |
ISSN | 1063-6854 |