オグラ アツシ
Ogura Atusi
小椋 厚志 所属 明治大学 理工学部 職種 専任教授 |
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言語種別 | 英語 |
発行・発表の年月 | 1985 |
形態種別 | 学術雑誌 |
標題 | Germanium film on SiO2 with a 〈100〉 texture deposited by the rf sputtering technique |
掲載誌名 | Applied Physics Letters |
巻・号・頁 | 47(10),pp.1059-1061 |
著者・共著者 | Koji Egami, Atsushi Ogura |
概要 | Germanium (Ge) films on SiO2 with 〈100〉 texture deposited by a sputtering technique and the texture enhancement by a subsequent solid-state thermal annealing are demonstrated for the first time. A 0.6-μm-thick Ge film on a surface oxidized Si wafer deposited by the rf sputtering technique at 600°C produces a 〈100〉 texture, and the preferential orientation of the film is enhanced by a conventional grain growth process at 900°C (approximately 0.95Tm, where Tm is the melting point in the Kelvin scale) for 1 h, while the crystallographic texture of the films has never changed at 650°C (0.75Tm) annealing. The texture enhancement is interpreted by the existence of 〈100〉 oriented precursors and a simple coalescence and rearrangement model. |
DOI | 10.1063/1.96378 |
ISSN | 0003-6951 |
PermalinkURL | https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=0041167121&origin=inward |