オグラ　アツシ   Ogura Atusi   小椋　厚志    所属   明治大学  理工学部    職種   専任教授
言語種別	日本語
発行・発表の年月	1985/08
形態種別	学術雑誌
査読	査読あり
標題	MINIMIZATION OF RESIDUAL STRESS IN SOI FILMS BY USING AlN INTERLAID INSULATOR.
掲載誌名	Japanese Journal of Applied Physics, Part 2: Letters
巻・号・頁	24(8),669-671頁
著者・共著者	Atsushi Ogura, Koji Egami, Masakazu Kimura
概要	It was found that residual stress in SOI film recrystallized by laser annealing depends on both substrates and interlaid insulator materials. For a stress free Si film, a thermal expansion coefficient of the underlaid material, comprising of a substrate and an interlaid insulator should be slightly larger than that of Si. AlN was found to be a very effective interlaid insulator. In the structure of resolidified-Si/3 mu m thick insulator/Si substrate, the residual stress in SOI film on AlN (5 multiplied by 10**9 dyn/cm**2) was lower than that on SiO//2 (7 multiplied by 10**9 dyn/cm**2).
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