オグラ　アツシ   Ogura Atusi   小椋　厚志    所属   明治大学  理工学部    職種   専任教授
言語種別	英語
発行・発表の年月	1990
形態種別	国際会議議事録
査読	査読あり
標題	Improvement of SiO<inf>2</inf>/Si interface flatness by post oxidation annealing
掲載誌名	Proceedings - The Electrochemical Society
巻・号・頁	90(7),pp.332-341
著者・共著者	Atsushi Ogura
概要	Post oxidation annealing (POA) for SiO2/Si interface flatness improvement was examined. Five kinds of Si substrates, which had (100), (110), (111), (511), and (221) orientations, were thermally oxidized and subsequently annealed in pure Ar atmosphere for 5 minutes using a lamp or 1 hour using a furnace annealer, respectively. The flatness of low-index plane interfaces, such as (100), (110) and (111), were improved by POA. However, high-index interfaces of (511) and (221) were rather roughened with low-index micro-facet formation. A reaction at the SiO2/Si interface is thought to occur during high temperature POA process. Low-index plane interfaces, which are considered to have low interface energy, appeared as a result of this reaction.
DOI	10.1149/1.2085680
ISSN	0161-6374