オグラ アツシ
Ogura Atusi
小椋 厚志 所属 明治大学 理工学部 職種 専任教授 |
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言語種別 | 日本語 |
発行・発表の年月 | 1990/01/01 |
標題 | Nonseeded crystalline orientation control for Si-on-Insulator laser recrystallization |
掲載誌名 | Japanese Journal of Applied Physics |
巻・号・頁 | 29,1630-1633頁 |
著者・共著者 | Atsushi Ogura |
概要 | The orientation control technique for Si-on-insulator fabrication by laser recrystallization with artificial seeds, called 2-step laser annealing, is demonstrated. In this technique, a crystalline substrate is not used as a seeding material. Where the controllability is defined as the probability of having the orientation within 20° from (100), 94% controllability was successfully achieved for artificial seeds, and at a distance of 50 µm from the sseds, controllability was 73%. © 1990 The Japan Society of Applied Physics. |
DOI | 10.1143/JJAP.29.1630 |
ISSN | 0021-4922 |
PermalinkURL | https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84951219072&origin=inward |