Faculty Database - KATSUMATA Hiroshi

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（Last updated : 2024-09-06 11:50:17）

KATSUMATA Hiroshi
Department Undergraduate School , School of Science and Technology

Position Associate Professor

■ Books and Papers

1.	2021/11	Article	Evaluation of Insulating Magnetic Materials Composed of Epoxy Resin and Pure Iron Powder for Motor and Reactor Core Applications IEEJ Journal of Industry Applications 10(6),pp.606-611 (Collaboration)
2.	2020/12	Article	Evaluation of Insulating Magnetic Materials Composed of Epoxy Resin and Pure Iron Powder for Motor and Reactor Core Applications Proceedings of the 23rd International Conference on Electrical Machines and Systems pp.139-144 (Collaboration)
3.	2020/08	Article	Formation of Mg₂Si_1-xSn_x Thin Films by Co-sputtering and Investigation of their p-type Electrical Conduction Japanese Journal of Applied Physics, Conference Proceedings 8,pp.011003-1-011003-8 (Collaboration)
4.	2020/08	Article	Structural, Optical and AC Conductivity Studies on Polycrystalline-Si/Nanocrystalline-FeSi₂ Composite Thin Films Japanese Journal of Applied Physics, Conference Proceedings 8,pp.011301-1-011301-6 (Collaboration)
5.	2016/06	Article	Preparation of β-FeSi₂ by plasma activated sintering of mechanically milled powders and its application Materials Science and Technology of Japan pp.78-81 (Collaboration)
6.	2015/07	Article	Synthesis and crystal growth of Mg₂Si by the liquid encapsulated vertical gradient freezing method Japanese Journal of Applied Physics 54,pp.085503-1-085503-5 (Collaboration)
7.	2014/02	Article	Optical transition in nanocrystalline Si doped SiO₂ thin films formed by co-sputtering Canadian Journal of Physics 92,pp.732-735 (Collaboration)
8.	2013/01	Article	Effects of Ga doping and nitridation on ZnO films prepared by RF Sputtering Material Research Society Symposium Proceedings 1494,pp.6 pages (Collaboration)
9.	2013/01	Article	Optical band-gap of TiO₂ nanopowders doped with Al₂O₃ Material Research Society Symposium Proceedings 1493,pp.6 pages (Collaboration)
10.	2012/05	Article	Growth of Si_0.5Ge_0.5 Single Crystals by the Traveling Liquidus-zone Method and their Structural Characterization Procedia Engineering 36,pp.404-410 (Collaboration)
11.	2012/04	Article	Deposition of TaN Films by RF sputtering and their barrier properties in Cu/TaN/Dielectrics/Si MIS structures e-Journal of Surface Science and Nanotechnology 10,pp.107-113 (Collaboration)
12.	2012/01	Article	Development of microwave absorbing materials prepared from a polymer binder including Japanese lacquer and epoxy resin Physics Procedia 23,pp.69-72 (Collaboration)
13.	2012/01	Article	Structural and electrical properties of Co-doped β-FeSi₂ thin films prepared by RF magnetron sputtering Physics Procedia 23,pp.9-12 (Collaboration)
14.	2012/01	Article	Structural and electrical properties of β-FeSi₂ bulk materials for thermoelectric applications Physics Procedia 23,pp.13-16 (Collaboration)
15.	2011/03	Article	Experimental approaches to the study of β-FeSi₂ pp.24-28 (Collaboration)
16.	2011/03	Article	Properties of TaN Films for ULSIs Prepared by Reactive Sputter Deposition Journal of Surface Analysis 17(3),pp.247-251 (Collaboration)
17.	2011/02	Article	The effect of Crystalline Structure on Photoluminescence of the β-FeSi₂ Film Prepared by Pulsed Laser Deposition Using Two Types of Target Physics Procedia 11,pp.158-162 (Collaboration)
18.	2010/12	Article	Photoluminescence properties of AlN:Eu,Si thin films Proc. of the 29th Symposium on Matererials Science and Engineering Research Center of Ion Beam Technology, Hosei University pp.45-48 (Collaboration)
19.	2010/12	Article	Photoluminescent propertiesof Er and Yb doped nc-Si/SiO₂ thin film Proc. of the 29th Symposium on Matererials Science and Engineering Research Center of Ion Beam Technology, Hosei University pp.55-58 (Collaboration)
20.	2010/12	Article	Resistivity variation of TaN thin films for barrier metal Proc. of the 29th Symposium on Matererials Science and Engineering Research Center of Ion Beam Technology, Hosei University pp.49-54 (Collaboration)
21.	2010/12	Article	The crystalline effect of the of the β-FeSi₂ film using two types target prepared by pulsed laser deposition IEEE Proc.of Int. Conf. on Electrical and Computer Engineering (ICECE 2010) pp.210-213 (Collaboration)
22.	2004/06	Article	Pb-free bumping for high-performance SoCs IEEE Proceedings of 54th Electronic Components and Technology Conference, USA, IEEE, cat. No.04CH37546 1,pp.655-660 (Collaboration)
23.	2003/09	Article	Development of dishing-less slurry for poly silicon chemical-mechanical polishing process Jpn. J. Appl. Phys. 42,pp.5433-5447 (Collaboration)
24.	2002/09	Article	Oxygen plasma damage in GaAs directly exposed to surface-wave plasma Jpn. J. Appl. Phys. 41,pp.5762-5768 (Collaboration)
25.	2002/08	Article	Characterization of a New Cleaning Method Using Electrolytic Ionized Water for Polysilicon Chemical Mechanical Polishing Process Jpn. J. Appl. Phys. 41,pp.5098-5103 (Collaboration)
26.	2001/09	Article	Evaluation of oxygen-plasma damage in GaAs exposed to a surface-wave plasma source developed for the ashing process Jpn. J. Appl. Phys. 40,pp.5438-5443 (Collaboration)
27.	2001/01	Article	Fabrication of heterostructure p-β-Fe_0.95Mn_0.05Si₂/n-Si diodes by Fe⁺ and Mn⁺ co-implantation in Si(100) substrates Thin Solid Films 381,pp.244-250 (Collaboration)
28.	2000/11	Article	Etching, smoothing, and deposition with gas-cluster ion beam technology Surf. Coat. Technol. 133-134,pp.273-282 (Collaboration)
29.	2000/03	Article	O₂ cluster ion-assisted deposition for tin-doped indium oxide films Nucl. Instrum. Methods Phys. Res. B 161-163,pp.952-957 (Collaboration)
30.	1999/12	Article	High-intensity oxygen cluster ion beam generation and its application to cluster ion-assisted deposition Eur. Phys. J. D, (9),pp.635-638 (Collaboration)
31.	1999/01	Article	Optical and electrical characterizations of Mn doped p-type β-FeSi₂ Nucl. Instrum. Methods Phys. Res. B 147,pp.337-342 (Collaboration)
32.	1998/11	Article	Optical Thin Film Formation by Gas-cluster Ion Beam Assisted Deposition AIP Proceedings of the 15th Int. Conf. on Application of Accelerators in Research and Industry, Denton, Texas, USA (475),pp.409-412 (Collaboration)
33.	1998/09	Article	Formation of polycrystalline β-FeSi₂ layers by ion-implantation and their optical properties Mater. Sci. Eng. A 253,pp.284-291 (Collaboration)
34.	1998/06	Article	Formation of oxide thin films for optical applications by O₂-cluster ion beam assisted deposition IEEE proceedings of the 12th International Conference on Ion Implantation Technology, Kyoto, Japan, IEEE Cat. No.98EX144 pp.1195-1198 (Collaboration)
35.	1998/06	Article	Fullerene ion (C₆₀⁺) implantation in GaAs(100) substrate IEEE proceedings of the 12th International Conference on Ion Implantation Technology, Kyoto, Japan, IEEE Cat. No.98EX144 pp.1203-1206 (Collaboration)
36.	1998/01	Article	Diffusion and defects in Yb implanted InP Defects and Diffusion Forum 157-159,pp.113-124 (Collaboration)
37.	1997/05	Article	Effect of multiple-step annealing on the formation of semiconducting β-FeSi₂ and metallic α-Fe₂Si₅ on Si(100) by ion beam synthesis Jpn. J. Appl. Phys. 36,pp.2802-2812 (Collaboration)
38.	1997/05	Article	Ion-beam-induced epitaxial crystallization (IBIEC) and solid phase epitaxial growth (SPEG) of Si_1-xC_x layers in Si fabricated by C ion implantation Nucl. Instrum. Methods Phys. Res. B 127-128,pp.350-354 (Collaboration)
39.	1997/03	Article	Fabrication of p-b-Fe1-xMnxSi2/n-Si Heterostructure Diode and Their Electrical and Optical Properties Materials Research Society Symposium Proceedings 478,pp.267-272 (Collaboration)
40.	1997/03	Article	Ion beam synthesis and characterization of metastable group-IV alloy semiconductors Proceedings of the 7th International Symposium on Advanced Nuclear Energy Research, Takasaki, Japan 201-206,pp.218-223 (Collaboration)
41.	1997/03	Article	Two- and three-step annealing effects of metallic and semiconducting iron silicides formed by ion beam synthesis Proceedings of the 7th International Symposium on Advanced Nuclear Energy Research, Takasaki, Japan pp.201-206 (Collaboration)
42.	1997/01	Article	Crystallization of SiSn and SiSnC layers in Si by solid phase epitaxy and ion-beam-induced epitaxy Nucl. Instrum. Methods Phys. Res. B 121,pp.199-202 (Collaboration)
43.	1997/01	Article	Photoluminescence studies of epitaxial Si_1-xGe_x and Si_1-x-yGe_xC_y layers on Si formed by ion beam synthesis Nucl. Instrum. Methods Phys. Res. B 121,pp.146-150 (Collaboration)
44.	1996/12	Article	Growth of Ge_1-xC_x alloys on Si by combined low-energy ion beam deposition and molecular beam epitaxy method Mater. Res. Soc. Symp. Proc. 438,pp.393-398 (Collaboration)
45.	1996/11	Article	Optical absorption and photoluminescence studies of β-FeSi₂ prepared by heavy implantation of Fe⁺ ions into Si J. Appl. Phys. 80,pp.5955-5962 (Collaboration)
46.	1996/08	Article	Electron spin resonance studies in β-FeSi₂ crystals J. Appl. Phys. 80,pp.1678-1681 (Collaboration)
47.	1996/08	Article	Photoluminescence and Raman scattering studies of 2 MeV Yb⁺-implanted InP as a function of etching depth J. Appl. Phys. 80,pp.2383-2387 (Collaboration)
48.	1996/08	Article	Synthesis of β-FeSi₂ for optical applications by Fe triple-energy ion implantation into Si(100) and Si(111) substrates Thin Solid Films 281-282,pp.252-255 (Collaboration)
49.	1996/07	Article	Synthesis of metastable group-IV alloy semiconductors by ion implantation and ion-beam-induced epitaxial crystallization Appl. Surf. Sci. 100-101,pp.498-502 (Collaboration)
50.	1996/03	Article	Electrical properties of β-FeSi₂ bulk crystal grown by horizontal gradient freeze method Proceedings of the 15th International Conference on Thermoelectrics, Pasadena, USA, IEEE Cat. No.96TH8169 pp.62-66 (Collaboration)
51.	1996/03	Article	Optical, electrical and structural properties of polycrystalline β-FeSi₂ thin films fabricated by electron beam evaporation of ferrosilicon Proceedings of the 15th International Conference on Thermoelectrics, Pasadena, USA, IEEE Cat. No.96TH8169 pp.479-483 (Collaboration)
52.	1995/12	Article	Heavily carbon-doped GaAs layers prepared by low-energy ion-beam impingement during molecular beam epitaxy Nucl. Instrum. Methods Phys. Res. B106,pp.133-136 (Collaboration)
53.	1995/12	Article	Structural and optical characterization of β-FeSi₂ layers on Si formed by ion beam synthesis Thin Solid Films 270,pp.406-410 (Collaboration)
54.	1995/11	Article	Growth of Si_1-xSn_x layers on Si by ion-beam-induced epitaxial crystallization (IBIEC) and solid phase epitaxial growth (SPEG) Mater. Res. Soc. Symp. Proc. 396,pp.207-212 (Collaboration)
55.	1995/11	Article	Structural properties of β-FeSi₂ bulk crystal grown by horizontal gradient freeze method Mater. Res. Soc. Symp. Proc. 402,pp.331-336 (Collaboration)
56.	1995/04	Article	Fabrication of epitaxial silicides thin films by combining low-energy ion beam deposition and silicon molecular beam epitaxy Mater. Res. Soc. Symp. Proc. 387,pp.517-522 (Collaboration)
57.	1995/04	Article	Ion-beam-induced epitaxy and solid phase epitaxy of SiGeC on Si formed by Ge and C ion implantation and their structural and optical properties Mater. Res. Soc. Symp. Proc. 388,pp.189-194 (Collaboration)
58.	1995/03	Article	Optical and crystalline properties of Yb implanted InP J. Appl.Phys. 77,pp.1881-1887 (Collaboration)
59.	1995/02	Article	Optical and structural properties of β-FeSi₂ layers on Si fabricated by triple ⁵⁶Fe ion implantations Proceedings of the 9th International Conference on Ion Beam Modification of Materials, Canberra, Australia pp.943-946 (Collaboration)
60.	1993	Article	Optical activity of Yb³⁺ in MeV ion-implanted InP Mater. Res. Soc. Symp. Proc. pp.201-206 (Collaboration)
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■ Conference Presentations

1.	2023/11/13	Evaluation of the Effects of Structural Parameters on External Quantum Efficiency of Si/Mg₂Si Heterojunction Photodiodes Using Device Simulation (TACT2023 International Thin Films Conference (C-P-164))
2.	2023/11/13	Impact of Interfacial SiO₂ Layers on the Photovoltaic Characteristics of n-type Nanocrystalline β‐FeSi₂ Embedded in Polycrystalline Si Formed on p-type Si Substrates (TACT2023 International Thin Films Conference (B-P-80))
3.	2023/11/13	Optical and Electrical Properties of SiC Added SiO_x Films for Light Emitting and Sensing Devices (TACT2023 International Thin Films Conference (B-P-161))
4.	2023/11/13	The Influence of Ar-N₂/O₂ Flow Ratio on the Types of Electrical Conductivity in Cu and N co-doped ZnO Films formed by RF Magnetron Co-Sputtering (TACT2023 International Thin Films Conference (C-P-134))
5.	2022/07/31	Correlation between Plasma Color and Properties of Mg₂Si Thin Films formed by RF Magnetron Sputtering (6th Asia-Pacific Conference on Semiconducting Silicides (APAC SILICIDE 2022) (P-II-12, pp.151-15))
6.	2021/12/14	Band Offsets and Charge-Discharge Characteristics of Semiconductor-Based Solid-State Rechargeable Battery with pin Structure (Material Research Meeting 2021 (MRM2021) (D2-PV22-08))
7.	2021/11/15	Control of hole carrier density of Si/nanocrystalline β-FeSi₂ composite films by co-sputtering (TACT2021 International Thin Films Conference (A-P-106))
8.	2021/11/15	Deposition of Mg₂Si_1-xSn_x films by co-sputtering using two different targets and a comparison of the effect of subsequent thermal annealing process on film properties (TACT2021 International Thin Films Conference (C-P-146))
9.	2021/11/15	Effect of annealing temperature on the light absorption and visible photoluminescence spectra of nanocrystalline SiC embedded in SiO_x films prepared by co-sputtering (TACT2021 International Thin Films Conference (B-P-093))
10.	2021/11/15	Film properties of silicon nitride thin films embedded with nanocrystalline Si (TACT2021 International Thin Films Conference (A-P-166))
11.	2021/11/15	First principles calculations and experimental studies of the bandgap of nanocrystalline SiC (TACT2021 International Thin Films Conference (G-P-077))
12.	2019/09/21	Effects of post-annealing conditions on crystal structure and electrical properties of Mg₂Si_1-xSn_x thin films
13.	2019/09/21	Frequency dependence of alternating current conductivity of Si/β-FeSi₂ composite thin films with different post-heat treatment temperatures
14.	2019/09/19	Photoluminescence excitation spectra of AlN films co-doped with Si and Eu
15.	2019/09/18	Characterization of insulation properties and magnetic permeability of composites based on epoxy resin containing iron powders
16.	2019/09/15	Effects of Si and C additive amount and post-annealing temperature on the optical properties of amorphous and nanocrystalline SiC embedded in silicon oxide films
17.	2019/09/04	Photoluminescence and photoluminescence excitation spectra of Eu and Si co-doped AlN films for visible light emitting devices (8th International Workshop on Photoluminescence in Rare Earths: Photonic Materials and Devices (PRE19) (P30))
18.	2019/07/23	Formation of Mg₂Si_1-xSn_x Thin Films by Co-sputtering and Their p-Type Electrical Conduction (5th Asia-Pacific Conference on Semiconducting Silicides (APAC SILICIDE 2019) (Tue-a-O29))
19.	2019/07/20	Structural, Optical and AC Conductivity Studies on Amorphous-Si/β-FeSi₂ Composite Thin Films (5th Asia-Pacific Conference on Semiconducting Silicides (APAC SILICIDES 2019) (P10))
20.	2019/03/11	Electrical conduction of amorphous Si/β-FeSi₂ composite thin films
21.	2019/03/11	Formation of amorphous and nanocrystalline SiC in Si oxide films and evaluation of their optical properties
22.	2018/11/12	Enhancement and stabilization of blue photoluminescence from Eu and Si codoped AlN films formed by reactive co-sputtering (International Workshop on Nitride Semiconductors (MoP-CR-11) 2018)
23.	2018/09/20	The influence of co-doped materials on the formation of Eu and Si co-doped AlN thin films by sputtering method
24.	2018/09/19	Electrical properties of MgSiSn thin films formed by co-sputtering
25.	2018/07/22	Fundamentals of materials characterization of thin films and recent topics
26.	2018/07/21	Formation of a-Si/β-FeSi₂ composite thin films and their application in semiconductor-all-solid-state secondary batteries
27.	2018/07/21	Formation of MgSiSn thin films by co-sputtering and the evaluation of physical properties
28.	2018/07/21	The influence of heat treatment conditions and carbon addition during formation of Si-based nanocrystals on their optical properties
29.	2017/10/17	Blue and red photoluminescence from Eu and Si codoped AlN films formed by reactive co-sputtering (TACT2017 International Thin Films Conference (C-P-0171))
30.	2017/10/17	Prediction of nanocrystalline-Si size in SiO₂ matrix based on LSW theory (TACT2017 International Thin Films Conference (C-P-0147))
31.	2017/09/08	Formation of Mg₂Si_1-xSn_x thin films by co-sputtering
32.	2017/08/10	Crystal Growth of Mg₂Si for Thermoelectric Applications by the Liquid Encapsulated Vertical Gradient Freezing Method (EMN 3CG & Metallic Glasses Meeting (pp.35-36))
33.	2017/07/29	Formation of amorphous Si/β-FeSi2 composite thin films by co-sputtering and their characterization
34.	2017/07/29	Influence of form of raw materials and filler content of liquid encapsulant on Mg₂Si crystal growth by vertical gradient freezing method
35.	2017/03/15	Prediction of nanocrystalline-Si size in SiO₂ matrix based on LSW theory
36.	2016/09/15	The influence of Ag doping and the effect of two-step annealing on the solid phase growth of Mg₂Si thin films
37.	2016/09/06	Bulk Single Crystal Growth of Mg₂Si by the Liquid Encapsulated Vertical Gradient Freezing Method (Energy, Materials and Nanotechnology, the Collaborative Conference on Crystal Growth (EMN-3CG))
38.	2016/08/09	Formation of Eu,Si codoped AlN thin films on Si substrate by reactive co-sputtering for heterojunction visible light emitting diode (The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18) (TuP-T09-8))
39.	2016/08/09	Si-based visible luminescent material grown on Si substrates by chemical reaction with Si powder (The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18) (Tu1-G03-7))
40.	2016/08/09	Vertical Gradient Freeze Growth of Mg₂Si crystals using Liquid Encapsulated Liquinert Process (The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18) (TuP-G06-35))
41.	2016/03/21	Influence of shape and purity of raw materials and halogen treatment of liquid encapsulant on Mg₂Si crystal growth by vertical gradient freezing method
42.	2015/11/17	Fabrication and optical characterization of p-ZnO:Cu,N/n-SiC heterojunctions (International Thin Films Conference (TACT2015))
43.	2015/11/17	Formation of amorphous Si/β-FeSi₂ composite thin films by co-sputtering (International Thin Films Conference (TACT2015))
44.	2015/11/17	Optical and structural properties of Si_xC_1-x alloy thin films prepared by RF magnetron sputtering (International Thin Films Conference (TACT2015))
45.	2015/11/17	Visible and 1.5μm luminescence from SiO₂ thin films codoped with nc-Si and Er (International Thin Films Conference (TACT2015))
46.	2015/06/17	Photoluminescence and Electroluminescence from SiO₂ Thin Films (The 5th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2015))
47.	2014/11/13	Formation of ZnGaON Films Prepared by Two Types of co-Sputtering using ZnO or Zn Target and their Optical Properties (AVS (American Vacuum Society) 61st International Symposium and Exhibition (AVS-61), Baltimore, USA (TF-ThP9))
48.	2014/11/11	Formation of AlN Thin Films by Direct Nitridation of Aluminum Thin Films and Their Visible Photoluminescence Property (AVS (American Vacuum Society) 61st International Symposium and Exhibition (AVS-61), Baltimore, USA (EM-TuP7))
49.	2014/11/11	Solid Phase Growth of Mg₂Si Thin Films on Poly-Si/Glass Substrates Prepared by Aluminum Induced Crystallization (AVS (American Vacuum Society) 61st International Symposium and Exhibition (AVS-61), Baltimore, USA (EM-TuP9))
50.	2014/07/20	Processing of fine β-FeSi₂ powders and formation of β-FeSi₂ by electric discharge plasma activated sintering (ICSS-Silicide 2014 (International conference and summer school on advanced silicide technology 2014), Tokyo, Japan (20-P20))
51.	2014/07/20	Solid phase growth of Mg₂Si thin films on Si(111) and their optical, structural and electrical properties (ICSS-Silicide 2014 (International conference and summer school on advanced silicide technology 2014), Tokyo, Japan (20-AM-II-5))
52.	2014/07/20	Synthesis and crystallization of Mg₂Si by the liquid encapsulated vertical gradient freezing method, (ICSS-Silicide 2014 (International conference and summer school on advanced silicide technology 2014), Tokyo, Japan (20-P11))
53.	2014/07/08	Processing of fine β-FeSi₂ powders and formation of β-FeSi₂ by electric discharge plasma activated sintering (International Conference on Thermoelectrics, Tennessee, USA (PA5-015))
54.	2014/07/08	Solid phase growth of Mg₂Si thin films on Si(111) and their electrical, structural and optical properties (International Conference on Thermoelectrics, Tennessee, USA (PA2-039))
55.	2014/07/08	Sticking-free synthesis of Mg₂Si by vertical gradient freezing method using liquid encapsulants (International Conference on Thermoelectrics, Tennessee, USA (PA2-036))
56.	2013/08/23	Optical and Electrical Properties of Nanocrystalline Si Doped SiO_x Thin Films Formed by Co-Sputtering (The 25th International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS25), Toronto, Canada)
57.	2013/08/20	Photoluminescence Properties of Er and Nanocrystalline-Si in SiO₂ Films and Aqueous Solutions (The 25th International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS25)), Toronto, Canada)
58.	2013/07/27	Processing of nanoscale Fe-Si composite powders and formation of β-FeSi₂ by electric discharge plasma activated sintering (Asia-Pacific Conference on Green Technology with Silicides and Related Materials (APAC-SILICIDE 2013), Tsukuba, Japan)
59.	2013/07/27	Solid phase growth of Mg₂Si thin films on Si(100) and their optical, structural and electrical properties (Asia-Pacific Conference on Green Technology with Silicides and Related Materials (APAC-SILICIDE 2013), Tsukuba, Japan)
60.	2013/07/27	Synthesis of Mg₂Si bulk crystal by vertical gradient freezing method using KCl as liquid encapsulant (Asia-Pacific Conference on Green Technology with Silicides and Related Materials (APAC-SILICIDE 2013), Tsukuba, Japan)
61.	2012/11/26	Effects of Ga doping and nitridation on ZnO films prepared by RF Sputtering (2012 Materials Research Society, Fall Meeting)
62.	2012/11/26	Optical band-gap of TiO₂nanopowders doped with Al₂O₃ (2012 Materials Research Society, Fall Meeting)
63.	2012/11/02	Photoluminescence and electronic properties of nanocrystalline Si doped SiO₂ thin films formed by co-sputtering (25th International Microprocesses and Nanotechnology Conference)
64.	2012/10/16	Photoluminescence and Structural Properties of AlN:Eu,Si Prepared by RF magnetron Co-sputtering Using Multiple Target Materials (The 7th International Workshop on Nitride Semiconductors, Sapporo, Japan.)
65.	2012/10/09	The effect of charged particle irradiation on the formation of carbon thin films by DC-biased hot wire chemical vapor deposition (7th International Conference on HWCVD)
66.	2011/12/12	Deposition of TaN Films by RF sputtering and their barrier properties in Cu/TaN/Dielectrics/Si MIS structures (6th International Symposium on Surface Science (ISSS-6))
67.	2011/09/21	The Luminescence Property of SiO₂ Thin Films Doped with Rare Earth and Nanocrystalline Si (International Union of Materials Research Societies and International Conference in Asia (IUMRS-ICA2011))
68.	2011/09/20	Growth of Si_0.5Ge_0.5 single crystals by the traveling liquidus-zone method and their structural characterizations (International Union of Materials Research Societies and International Conference in Asia (IUMRS-ICA2011))
69.	2011/08/26	Structural and electrical properties of β-FeSi₂ bulk materials for thermoelectric applications (Asian School-Conference on Physics and technology of nanostructured Materials (ASCO-NANOMAT))
70.	2011/08/25	Structural and electrical properties of β-FeSi₂ thin films prepared by RF magnetron sputtering (Asian School-Conference on Physics and technology of nanostructured Materials (ASCO-NANOMAT))
71.	2011/08/23	Development of microwave absorbing materials prepared from a polymer binder including Japanese lacquer and epoxy resin (Asian School-Conference on Physics and technology of nanostructured Materials (ASCO-NANOMAT))
72.	2011/03/28	Experimental approaches to the study of β-FeSi2
73.	2010/12/18	The crystalline effect of the of the β-FeSi₂ film using two types target prepared by pulsed laser deposition (The International Conference on Electrical and Computer Engineering (ICECE), Dec. 18-20, 2010, Dhaka, Bangladesh.)
74.	2004/09/15	Thermally Stable Magnetic Tunnel Junctions for High Density MRAM (2004 International Conference on Solid State Devices and Materials,　Tokyo,　Japan)
75.	2004/06	Pb-free bumping for high-performance SoCs (54th Electronic Components and Technology Conference, USA,IEEE)
76.	1998/11/04	Optical Thin Film Formation by Gas-cluster Ion Beam Assisted Deposition (15th Int. Conf. on Application of Accelerators in Research and Industry, Denton, Texas, USA)
77.	1998/06/22	Formation of oxide thin films by O₂-cluster ion beam assisted deposition (12th International Conference on Ion Implantation Technology, Kyoto, Japan)
78.	1998/06	Fullerene ion (C₆₀⁺) implantation in GaAs(100) substrate (12th International Conference on Ion Implantation Technology, Kyoto, Japan, IEEE)
79.	1997/03	Ion beam synthesis and characterization of metastable group-IV alloy semiconductors (The 7th International Symposium on Advanced Nuclear Energy Research, Takasaki, Japan)
80.	1997/03	Two- and three-step annealing effects of metallic and semiconducting iron silicides formed by ion beam synthesis (The 7th International Symposium on Advanced Nuclear Energy Research, Takasaki, Japan)
81.	1996/12	Growth of Ge_1-xC_x alloys on Si by combined low-energy ion beam deposition and molecular beam epitaxy method (Mater. Res. Soc. Symp.)
82.	1996/05/23	Photoluminescence studies of epitaxial Si_1-xGe_x and Si_1-x-yGe_xC_y layers on Si formed by ion beam synthesis (Joint International Symposium of the '96 MRS-J Conference and the 3rd Ion Engineering Conference, Makuhari, Japan)
83.	1996/03/26	Optical, electrical and structural properties of polycrystalline β-FeSi₂ thin films fabricated by electron beam evaporation of ferrosilicon (The 15th International Conference on Thermoelectrics, Pasadena, USA)
84.	1996/03	Electrical properties of β-FeSi₂ bulk crystal grown by horizontal gradient freeze method (The 15th International Conference on Thermoelectrics, Pasadena, USA, IEEE)
85.	1995/11	Growth of Si_1-xSn_x layers on Si by ion-beam-induced epitaxial crystallization (IBIEC) and solid phase epitaxial growth (SPEG) (Mater. Res. Soc. Symp.)
86.	1995/11	Structural properties of β-FeSi₂ bulk crystal grown by horizontal gradient freeze method (Mater. Res. Soc. Symp.)
87.	1995/04	Fabrication of epitaxial silicides thin films by combining low-energy ion beam deposition and silicon molecular beam epitaxy (Mater. Res. Soc. Symp.)
88.	1995/04	Ion-beam-induced epitaxy and solid phase epitaxy of SiGeC on Si formed by Ge and C ion implantation and their structural and optical properties (Mater. Res. Soc. Symp.)
89.	1995/02/05	Optical and structural properties of β-FeSi₂ layers on Si fabricated by triple ⁵⁶Fe ion implantations (9th International Conference on Ion Beam Modification of Materials,Canberra, Australia)
90.	1993/08/09	Optical activity and recrystallization of Yb⁺-MeV ion-implanted InP (International Conference on Luminescence, Connecticut, USA)
91.	1993/04	Optical activity of Yb³⁺ in MeV ion-implanted InP (Mater. Res. Soc. Symp.)
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■ Academic Qualifications

1.	1988/04～1992/03	Faculty of Engineering, Meiji University, Graduated,
2.	1992/04～1994/03	〔Master Course〕, Graduate School, Division of Engineering, Meiji University, Completed,
3.	1994/04～1997/03	〔Doctorial Course〕, Meiji University, Completed,
4.	1997/03/26 Degree Acquisition	Meiji University,

■ Career History

1.	1997/04～2000/03	Kyoto University Ion Beam Engineering Experimental Laboratory
2.	2000/04～2010/03	TOSHIBA Corporation Corporate Manufacturing Engineering Center

■ Major Subjects

electromagnetism, electronic device

■ Academic Associations Membership

2011/01～

Materials Research Society

■ Web Sites

Optobioelectronics Laboratory

■ Award History

1.	2023/11	Poster Award of Excellence, International Thin Films Conference (TACT2023), GIS TAIPE TECH Convention Center
2.	2015/11	Poster Award of Merit, International Thin Films Conference (TACT2015), National Cheng Kung University, Tainan, Taiwan
3.	2011/08	Best Poster Report Award, Asian School-Conference on Physics and Technology of Nanostructured Materials (ASCO-NANOMAT), Vladivostok, Russia
4.	2000/11	R.F.Bunshah Award for the Best Paper at 27th International Conference on Metallurgical Coatings and Thin Films, American Vacuum Society.

■ Current Specialized Field

Electric and electronic materials (Key Word：Semiconducting slicide, Nanocrystal, Wide band-gap semiconductor)

■ Patents

1.		Method of manufacturing oxide film and method of manufacturing semiconductor device
2.	2010/01/13	METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
3.	2010/11/16	Method of manufacturing semiconductor device, apparatus of manufacturing semiconductor device and semiconductor device
4.		METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT